Technical Description
This technology presents a ferroelectric thin film transistor with enhanced memory retention using a stacked lithium niobate structure and high-κ dielectric oxides having environmental stability.
Problems Addressed
- Expensive
- Poor Retention Time
- High Gate Leakage Current
- Limitations of Existing Methods
Tech Features
- Economical
- Eco-Friendly
- High Dielectric Constant
- Improved Memory Performance
- Reduced Leakage Current
Target Audience
- Semiconductor Industry
- Electronics & Computing Industry
- Telecommunication Industry
- Research & Development
Tech ID: P16-1377 TRL 5 Patent Status: Granted Available For Exclusive and Non-exclusive License
