Technical Description
The invention relates to an apparatus for sputter deposition of transition metal oxide thin films and heterostructures on single crystal substrate with and without amorphous layer.
Problems Addressed
- Limitations of Existing Methods
- Non-uniform Structure
- Uneven Thickness
- Unregulated deposition
- Non-stoichiometric Films
Tech Features
- Controlled Deposition
- Smooth Film Growth
- Slow & Controlled Growth
- No Undesirable Scattering
- Structural Uniformity
- Homogenous Thickness
- Stoichiometric Films
Target Audience
- Semiconductors Industry
- Electronics Industry
- Optics and Coatings Industry
- Energy Sector
- Research & Development
Tech ID: P16-1720 TRL 3 Patent Status: Granted Available For Exclusive and Non-exclusive License
