Technical Description
The invention introduces a perovskite-based ReRAM device that incorporates manganese chloride doping in methyl-ammonium lead iodide thin film.
Problems Addressed
- Complex-multistep Process
- High Switching Potential
- High Cost of Production
- Energy Inefficiency
Tech Features
- Higher ON/OFF Ratio
- Lower Switching Potential
- Better Cyclic Stability
- One-step Deposition
- Cost Effective
Target Audience
- Consumer Electronics
- Healthcare & Wearables
- Automotive Industry
- Industrial Data Canters
Tech ID: P16-2090 TRL 4 Patent Status: Granted Available For Exclusive and Non-exclusive License
×
P16-2090
DOWNLOAD
Send download link to email.



