Technical Description
The technology introduces a p-type zinc oxide thin films with lower resistivity and high reproducibility using magnetic field-assisted annealing techniques.
Problems Addressed
- Dopant Insolubility
- Defects Hindrance
- Doping Asymmetry
- Limited Hole Mobility
Tech Features
- Magnetic Field Annealing
- Undoped Zinc Oxide
- Intrinsic ZnO Conversion
- Reproducible Thin Films
- Digital clock icon
- Lower Resistivity
Target Audience
- Electronic Sector
- Automotive Industry
- Semiconductor
- Solar Cell Development
Tech ID: P23-2092 TRL 4 Patent Status: Granted Available For Exclusive and Non-exclusive License
