Neuro-Inspired Charge Trapping Transistor
Tech ID
P18-1075
Patent Status
Published in India
Design Status
--
Technical Description
The technology offers a charge-trapping metal oxide semiconductor field effect transistor with ultra-low energy consumption and neuro-inspired learning capabilities.
Problems Addressed
- von-Neumann Architecture
- High Energy & Area
- Heat Dissipation
- Computational Complexity
- Low Power Learning
- Scalability
TARGET AUDIENCE
- Automotive Industry
- Aerospace Technology
- Research and Development
- Military and Defense
- Telecommunications Industry
- Electronics Industry
TECH FEATURES
- Ultra-Low Energy
- Neuro-Inspired Learning Capabilities
- Doping-Less Thin Channel
- Low Energy Consumption
- Low Area & Subthreshold Operation
- Small Device Dimension
P18-1075
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Available For
Exclusive and Non-exclusive License.
Cost
—
Stage of Developments
Technology Validated
Contact Person
Mr. Lalit Ambastha
IP Bazzaar Technology Pvt. Ltd.
IP Bazzaar Technology Pvt. Ltd.
12 First Floor, National Park, Lajpat Nagar-IV,
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com