Technical Description
This invention relates to a method for depositing high a-axis oriented Aluminum Nitride (AIN) thin films on Mo-coated silicon substrates using reactive RF magnetron sputtering ensuring superior crystallographic alignment and film quantity of MEMS and high frequency devices.
Problems Addressed
- Lacks Orientation Control
- Inefficient Deposition Method
- Poor Lattice Matching
- Weak Adhesion Issues
- Limited Film Uniformity
Tech Features
- Enhanced Film Orientation
- Optimized Sputtering Parameters
- Better Adhesion Interface
- Improved Surface Crystallinity
- Efficient Growth Process
Target Audience
- MEMS & Semiconductor Fabrication Companies
- Thin-Film Material Manufactures
- Advanced Electronics & Sensor Developers
- Defense & Aerospace Electronics
- Research & Development
Tech ID: P23-1676 TRL 5 Patent Status: Granted Available For Exclusive and Non-exclusive License
