Technical Description
The technology provides a two-dimensional metal oxide semiconductor (MOS) capacitor with a molybdenum disulfide (MoS2) as photosensitive layer.
Problems Addressed
- Architectural framework that integrates a photosensor with a capacitor
- Scalability
- Metal oxide based photosensor capacitor
- Auto-powering capacitor
Tech Features
- Two-Dimensional Photosensitive MOS Capacitor
- Photosensitive MoS2 Layer
- Consistent MoS2 Composition
- Homogeneous Growth
- Large Scale Manufacturing
- Self-Powered Capacitive Photosensor
Target Audience
- Optical Communication Sector
- Semiconductor Industry
- Biomedical Imaging Sector
- Defense Industry
Tech ID: P16-1066 TRL 3 Patent Status: Application is published Filed in India Available For Exclusive and Non-exclusive License
