Efficient Ferroelectric Device
Tech ID
P16-1377
Patent Status
Granted in India
Design Status
--
Technical Description
This technology presents a ferroelectric thin film transistor with enhanced memory retention using a stacked lithium niobate structure and high-κ dielectric oxides having environmental stability.
Problems Addressed
- Expensive
- Poor Retention Time
- High Gate Leakage Current
- Limitations of Existing Methods
TARGET AUDIENCE
- Semiconductor Industry
- Electronics & Computing Industry
- Telecommunication Industry
- Research & Development
TECH FEATURES
- Economical
- Eco-Friendly
- High Dielectric Constant
- Improved Memory Performance
- Reduced Leakage Current
P16-1377
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Available For
Available for exclusive and non exclusive license
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Cost
—
Stage of Developments
Technology Validated
Contact Person
Mr. Lalit Ambastha
IP Bazzaar Technology Pvt. Ltd.
IP Bazzaar Technology Pvt. Ltd.
12 First Floor, National Park, Lajpat Nagar-IV,
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com