Efficient Thin Film Transistor
Tech ID
P16-1291
Patent Status
Granted in India
Design Status
--
Technical Description
This invention introduces a thin film transistor with an optimized gate interface, enabling low operating voltage, enhanced electron mobility, and reduced trapping density for improved performance.
Problems Addressed
- High Operating Voltage
- Excessive Gate Leakage
- Limited Electron Mobility
- High Interface Trap Density
- Restricted Low-Power Applications
TARGET AUDIENCE
- Electronics Manufacturers
- Semiconductor Industry
- Industrial & Medical Equipment Maker
- Research and development Institution
TECH FEATURES
- Enhanced Electron Mobility
- Low Operating Voltage
- Optimized Subthreshold Swing
- Reduced Interface Trap Density
- Advanced Material Selection
- Optimized Process Integration
P16-1291
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Available For
Available for exclusive and non exclusive license
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Cost
—
Stage of Developments
Technology Validated
Contact Person
Mr. Lalit Ambastha
IP Bazzaar Technology Pvt. Ltd.
IP Bazzaar Technology Pvt. Ltd.
12 First Floor, National Park, Lajpat Nagar-IV,
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com