Technical Description
This invention relates to a high -operating temperature avalanche photodiode (APD) designed for efficient detection of low photon flux in near infrared and infrared wavelengths. It integrates a photonic crystal slabs (PCS) structure with ultra-thin silicon or InGaAs absorber layers to achieve high absorption efficiency and minimal dark current at room temperature.
Problems Addressed
- Lacks Low-Dark Current Performance
- Inefficient Photon Absorption
- High Thermal Noise Interference
- Complex Semiconductor Layering
- Limited Broadband Response
- Poor Spectral Selectivity
Tech Features
- Enhanced Photon Absorption
- Efficient Dark Current Reduction
- Improved Broadband Response
- Optimized Optical Resonance
- Compact Pixel Architecture
- Better Thermal Stability
Target Audience
- Quantum Imaging Technology Companies
- Lidar & Remote Sensing Manufacturers
- Optical Communication & Photonics Industries
- Semiconductor Device & Sensor Manufacturers
- Research & Development
Tech ID: P16-1705 TRL 4 Patent Status: Published Available For Exclusive and Non-exclusive License
