Ion-Conducting Memristor
Tech ID
P16-1405
Patent Status
Granted in India
Design Status
--
Technical Description
The technology presents a cost-effective, high-performance oxide-based memristor featuring enhanced memory retention, improved durability, and an efficient fabrication method for advanced computing applications.
Problems Addressed
- Expensive Fabrication Methods
- Inefficient Switching Properties
- Low Device Reproducibility
- Energy-Inefficient Memristors
- Instability in Performance
TARGET AUDIENCE
- Semiconductor Industry
- Electronics Manufacturers
- Nanotechnology Sectors
- Computing & Memory Device Developers
- Academic & Research Institutions
TECH FEATURES
- Efficient Ion Conducting Memristor
- Cost-Effective Fabrication
- Eco-Friendly Oxide Components
- Enhanced Cyclic Stability
- Optimized On/Off Ratio
- Improved Retention Time
P16-1405
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Available For
Available for exclusive and non exclusive license
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Cost
—
Stage of Developments
Technology Validated
Contact Person
Mr. Lalit Ambastha
IP Bazzaar Technology Pvt. Ltd.
IP Bazzaar Technology Pvt. Ltd.
12 First Floor, National Park, Lajpat Nagar-IV,
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com