Technical Description
The technology presents a cost-effective, high-performance oxide-based memristor featuring enhanced memory retention, improved durability, and an efficient fabrication method for advanced computing applications.
Problems Addressed
- Expensive Fabrication Methods
- Inefficient Switching Properties
- Low Device Reproducibility
- Energy-Inefficient Memristors
- Instability in Performance
Tech Features
- Efficient Ion Conducting Memristor
- Cost-Effective Fabrication
- Eco-Friendly Oxide Components
- Enhanced Cyclic Stability
- Optimized On/Off Ratio
- Improved Retention Time
Target Audience
- Semiconductor Industry
- Electronics Manufacturers
- Nanotechnology Sectors
- Computing & Memory Device Developers
- Academic & Research Institutions
Tech ID: P16-1405 TRL 5 Patent Status: Granted Available For Exclusive and Non-exclusive License
