Lateral Strain Fields Generation

Technical Description

The invention focuses on creating lateral strain fields and bandgap modulation in adaptable semiconductor nanomembranes bonded to flexible substrates.

Problems Addressed

  • Limited Straining
  • Crystal Lattice Distortion
  • Compatibility Constraints
  • Feasibility Issues

Tech Features

  • Bandgap Modulation
  • Accurate Measurement
  • Strain Assessment
  • Highly Compatible
  • Cost Effective

Target Audience

  • Semiconductor Industry
  • Electronic Sector
  • Aerospace Engineering
  • Research & Development
Tech ID: P18-2054 TRL 4 Patent Status: Published Available For Exclusive and Non-exclusive License
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P18-2054

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Contact For Licensing

Lalit Ambastha

+91- 9811367838

Dr. Medha Kaushik

+91- 6359777555

tech@ipbazzaar.com

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