Technical Description
The technology involves a linear metal oxide-based memristor, a three-terminal device enabling optical and voltage tunable resistive switching for memory and synaptic applications using light and voltage pulses.
Problems Addressed
- Inaccurate Switching
- Lack of Reproducibility
- Inefficient Synaptic Plasticity
- Expensive Production
Tech Features
- Enhanced Accuracy
- Bipolar Switching
- Synaptic Efficiency
- Bottom-gated Design
- Non-hazardous
- Cost-effective
Target Audience
- Neuromorphic Computing
- Autonomous Driving System
- Electronic Industry
- Hardware Security
Tech ID: P16-2012 TRL 4 Patent Status: Published Available For Exclusive and Non-exclusive License
