Look-Up Tables Device for Gate Arrays Acceleration
Tech ID
P10-1078
Patent Status
Application is Published Filed in India
Design Status
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Technical Description
An in-memory static random-access memory (SRAM) cell that boosts the speed and efficiency of field programmable gate arrays. The technology is a supersmart storage system that changes how computers work, making them faster and more energy-efficient by using a unique approach different from traditional methods.
Problems Addressed
- Data Disturbance
- Requirement of 2n SRAM Cell
- Unsuitability as an FPGA Accelerator
- von Neumann Bottleneck Limitation
- Low Power Efficiency
- Low Programming Speed
TARGET AUDIENCE
- Information Technology Industry
- Telecommunication Sector
- Aerospace Industry
- Medical Sector
- Automotive Electronics
- Consumer Electronics
TECH FEATURES
- Non von Neumann Architecture
- High Power Efficiency
- Increased Speed
- Decoupled Read and Write Port
- Uses Less Area
- High Output
P10-1078
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Available For
Exclusive and Non-exclusive License.
Cost
—
Stage of Developments
Technology Validated
Contact Person
Mr. Lalit Ambastha
IP Bazzaar Technology Pvt. Ltd.
IP Bazzaar Technology Pvt. Ltd.
12 First Floor, National Park, Lajpat Nagar-IV,
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com