Neuro-Inspired Charge Trapping Transistor

Neuro-Inspired Charge Trapping Transistor

Tech ID

P18-1075

Patent Status

Published in India

Design Status

--

Technical Description

The technology offers a charge-trapping metal oxide semiconductor field effect transistor with ultra-low energy consumption and neuro-inspired learning capabilities.

Problems Addressed

TARGET AUDIENCE

TECH FEATURES

P18-1075

DOWNLOAD

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Available For

Exclusive and Non-exclusive License.

Cost

Stage of Developments

Technology Validated

Contact Person

Mr. Lalit Ambastha

IP Bazzaar Technology Pvt. Ltd.

IP Bazzaar Technology Pvt. Ltd.

12 First Floor, National Park, Lajpat Nagar-IV,
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com

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