Technical Description
The technology offers a charge-trapping metal oxide semiconductor field effect transistor with ultra-low energy consumption and neuro-inspired learning capabilities.
Problems Addressed
- Von-Neumann Architecture
- High Energy & Area
- Heat Dissipation
- Computational Complexity
- Low Power Learning
- Scalability
Tech Features
- Ultra-Low Energy
- Neuro-Inspired Learning Capabilities
- Doping-Less Thin Channel
- Low Energy Consumption
- Low Area & Subthreshold Operation
- Small Device Dimension
Target Audience
- Automotive Industry
- Aerospace Technology
- Research and Development
- Military and Defense
- Telecommunications Industry
- Electronics Industry
Tech ID: P18-1075 TRL 3 Patent Status: Published Available For Exclusive and Non-exclusive License
