Neuro-Inspired Charge Trapping Transistor

Neuro-Inspired Charge Trapping Transistor

Tech ID

P18-1075

Patent Status

Published in India

Design Status

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Technical Description

The technology offers a charge-trapping metal oxide semiconductor field effect transistor with ultra-low energy consumption and neuro-inspired learning capabilities.

Problems Addressed

  • von-Neumann Architecture
  • High Energy & Area
  • Heat Dissipation
  • Computational Complexity
  • Low Power Learning
  • Scalability

TARGET AUDIENCE

  • Automotive Industry
  • Aerospace Technology
  • Research and Development
  • Military and Defense
  • Telecommunications Industry
  • Electronics Industry

TECH FEATURES

  • Ultra-Low Energy
  • Neuro-Inspired Learning Capabilities
  • Doping-Less Thin Channel
  • Low Energy Consumption
  • Low Area & Subthreshold Operation
  • Small Device Dimension
P18-1075

P18-1075

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Available For

Exclusive and Non-exclusive License.

Cost

—

Stage of Developments

Technology Validated

Contact Person

Mr. Lalit Ambastha

IP Bazzaar Technology Pvt. Ltd.

IP Bazzaar Technology Pvt. Ltd.

12 First Floor, National Park, Lajpat Nagar-IV,
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com