Perovskite ReRAM With Manganese Doping

Technical Description

The invention introduces a perovskite-based ReRAM device that incorporates manganese chloride doping in methyl-ammonium lead iodide thin film.

Problems Addressed

  • Complex-multistep Process
  • High Switching Potential
  • High Cost of Production
  • Energy Inefficiency

Tech Features

  • Higher ON/OFF Ratio
  • Lower Switching Potential
  • Better Cyclic Stability
  • One-step Deposition
  • Cost Effective

Target Audience

  • Consumer Electronics
  • Healthcare & Wearables
  • Automotive Industry
  • Industrial Data Canters
Tech ID: P16-2090 TRL 4 Patent Status: Granted Available For Exclusive and Non-exclusive License
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P16-2090

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Contact For Licensing

Lalit Ambastha

+91- 9811367838

Dr. Medha Kaushik

+91- 6359777555

tech@ipbazzaar.com

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