Technical Description
This invention provides a template-free crystallization system for producing porous halide double perovskite single crystals through IR-assisted spin coating. The method utilizes oriented platelet merging to create high-surface-area crystals that optimize charge transport in optoelectronic devices.
Problems Addressed
- Inadequate Fabrication Process
- Template-Free Growth Deficits
- Absence of Structural Porosity
- Scalable Production Deficits
- Ineffective Interface Transport
- Lack of Crystalline Quality
Tech Features
- Improved Structural Characteristics
- Effective Evaporation of Solvents
- Improved Power Conversion
- Production of Scalable PSCs
- Accurate Charge Separation
- Better Device Measurements
Target Audience
- Semiconductor Manufacturing Sectors
- Solar Energy Industries
- Optoelectronic Sensor Industries
- Photovoltaic Manufacturing Sectors
- Research & Development
Tech ID: P23-1992 TRL 6 Patent Status: Granted Available For Exclusive and Non-exclusive License
