Technical Description
The invention offers an Organic Schottky Diode (OSD) using amorphous Silicon/Polycarbazole, demonstrating near ideal characteristics and suitable for industrial applications.
Problems Addressed
- Loss of Material
- Limited Barrier Height
- Low Rectification
- Chemical Degradation
Tech Features
- Amorphous Silicon Contact
- Excellent Barrier Height
- Semiconducting Polymer
- High Rectification
- Chemical-resistant
- Moisture-proof
Target Audience
- Electronic Sector
- Semiconductor Industry
- Telecommunications
- Research & Developments
Tech ID: P23-2065 TRL 6 Patent Status: Granted Available For Exclusive and Non-exclusive License
