Technical Description
This invention provides a method for producing large-area, high-quality two-dimensional materials with controlled structure and uniform properties using a controlled heating and gas supply process.
Problems Addressed
- Non-Uniform Crystal Formation
- Poor Shape Control Of Mos₂ Structures
- Produce H-Phase Instead Of R-Phase
- Small-Sized R-Phase Crystals
Tech Features
- R-phase TMD crystals
- Si/SiO₂ substrate growth
- Sword-like shaped structures
- Large-area growth (10–120 µm length)
- Pulsed carrier gas-assisted CVD growth
Target Audience
- Semiconductor manufacturing
- Photonic Technology Industry
- Nanoelectronics Industry
- Display Technology Industry
- Telecommunications Industry
- Advanced materials manufacturing
Tech ID: P16-2114 TRL 4 Patent Status: Granted Available For Exclusive and Non-exclusive License
