Technical Description
This invention introduces an advanced optical modulator using a Ge2Sb1Te4 chalcogenide phase-change material driven by direct electrical stimulation. It achieves high-efficiency, low-loss light modulation with strong angular independence across standard telecommunication wavebands.
Problems Addressed
- Low Modulation Efficiency
- High Optical Absorption
- Restricted Angular Independence
- Unfavorable Extinction Coefficients
- High Driving Voltages
- Degrading Thermal Sensitivity
- Elevated Operational Losses
Tech Features
- Direct Electrical Stimulation
- Enhanced Modulation Efficiency
- Low Extinction Coefficient
- Superior Relative Depth
- Multi-Division Multiplexing Capability
- Dual-Polarization Operational Support
Target Audience
- Free-Space Optical Communication Sectors
- Satellite Communication Industries
- Autonomous Vehicle Lidar Industries
- Ultra-Fast Optical Computing Sectors
- Research & Development
Tech ID: P10-2200 TRL 4 Patent Status: Granted Available For Exclusive and Non-exclusive License
