A Two Dimensional Photosensitive Capacitor
Tech ID
P16-1066
Patent Status
Application is published Filed in India
Design Status
--
Technical Description
The technology provides a two-dimensional metal oxide semiconductor (MOS) capacitor with a molybdenum disulfide (MoS2) as photosensitive layer
Problems Addressed
- Architectural framework that integrates a photosensor with a capacitor
- Scalability
- Metal oxide based photosensor capacitor
- Auto-powering capacitor
TARGET AUDIENCE
- Optical Communication Sector
- Semiconductor Industry
- Biomedical Imaging Sector
- Defense Industry
TECH FEATURES
- Two-Dimensional Photosensitive MOS Capacitor
- Photosensitive MoS2 Layer
- Consistent MoS2 Composition
- Homogeneous Growth
- Large Scale Manufacturing
- Self-Powered Capacitive Photosensor
P16-1066
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Available For
Exclusive and Non-exclusive License.
Cost
—
Stage of Developments
Technology Validated
Contact Person
Mr. Lalit Ambastha
IP Bazzaar Technology Pvt. Ltd.
IP Bazzaar Technology Pvt. Ltd.
12 First Floor, National Park, Lajpat Nagar-IV,
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com
New Delhi-110024, India
Tel: [+91] 11-26360036;
Fax: [+91] 11-26360037;
Mobile: [+91]9811367838;
Email: tech@ipbazzaar.com;
www.ipbazzaar.com