Technical Description
The invention is a seedless direct growth of aluminium nitride (AlN) thin films on conducting boron-doped nanocrystalline diamond.
Problems Addressed
- Acoustic Velocity Limits
- Costly Surface Polishing
- Metal Electrode Degradation
- Interfacial Voids and Defects
- Thermal Expansion Mismatch
Tech Features
- Buffer-Free Sputtering Integration
- Preferential Lattice Alignment
- High-Modulus Substrate Doping
- Ideal Acoustic Heterostructures
- Robust Dielectric Performance
- CMOS-Compatible Nanofabrication
Target Audience
- Piezoelectric & MEMS Developers
- RF Filter & Resonator Manufacturers
- Semiconductor & Nanofabrication Foundries
Tech ID: P23-2221 TRL 4 Patent Status: Granted Available For Exclusive and Non-exclusive License
