Technical Description
The invention introduces a tri-state doping less double-gate tunnel field-effect transistor within tunnel field-effect transistor technology.
Problems Addressed
- Lack of Tri-state Transistor
- High Power Consumption
- Voltage Sensitivity
- Inefficient Performance
Tech Features
- Double-gate Transistor
- No Doping Required
- Advanced Trinary Logic
- Low Power Consumption
- Enhanced Performance
Target Audience
- Semiconductor Industry
- Electronic Industry
- Communication Sector
- Research & Development
Tech ID: P16-2194 TRL 5 Patent Status: Published Available For Exclusive and Non-exclusive License
